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Module 25 6 7 MOSFETs Processing and Mask Layout 2

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💫 Short Summary

The video discusses the process of forming N and P sources, JFET, and gate formation in semiconductor devices. It emphasizes the importance of annealing for dopant activation and passivation for better channel mobility. The deposition of oxide and silicon nitride layers, nickel over silicon carbide, and ohmic contact formation are also covered. Steps include etching, annealing, and depositing nickel for proper contact. Aluminum wet etching, photoresist stripping, and dielectric isolation with polyimide and polyamide are detailed. Overall, the video provides a comprehensive overview of the semiconductor device fabrication process.

✨ Highlights
📊 Transcript
Formation of N+ source, P+ source, and JFET through different doping concentrations.
Importance of activating dopants post-implantation with annealing and a cap layer.
Deposit oxide and enhance surface morphology via sacrificial oxidation.
Passivation is key for improved channel mobility and reduced scattering at the surface.
Use of N2O for passivation in silicon carbide devices and growth of polysilicon or oxide for gate formation.
Deposition of oxide and silicon nitride layers on a device.
Preventing native oxide formation is crucial during the process.
Deposition of nickel over silicon carbide.
Significance of rapid thermal annealing at 600 degrees C.
Importance of careful sample handling to avoid unwanted oxide growth and ensure proper nickel silicide formation on the device surface.
Process for enhancing ohmic contact in semiconductor devices.
Removal of nickel silicide over silicon nitride using piranha solution.
Annealing at 600 degrees C to increase nickel silicide intensity.
Deposition of nickel on the backside for good ohmic contact.
Including nickel in active areas with specific width and gap dimensions.
Process for aluminum wet etching and photoresist stripping in device fabrication.
Aluminum is removed except over the gate and nickel.
Specific distances between source pad, gate pad, and gate poly are maintained.
Dielectric isolation is achieved using polyimide and polyamide.
Additional layers of tie, titanium, nickel, and silver are deposited for mask alignment and doping concentrations.